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| (R) IS-2100ARH Data Sheet April 2003 FN9037.1 Radiation Hardened High Frequency Half Bridge Driver The Radiation Hardened IS-2100ARH is a high frequency, 130V Half Bridge N-Channel MOSFET Driver IC, which is functionally similar to industry standard 2110 types. The lowside and high-side gate drivers are independently controlled. This gives the user maximum flexibility in dead-time selection and driver protocol. In addition, the device has on-chip error detection and correction circuitry, which monitors the state of the high-side latch and compares it to the HIN signal. If they disagree, a set or reset pulse is generated to correct the high-side latch. This feature protects the high-side latch from single event upsets (SEUs). Specifications for Rad Hard QML devices are controlled by the Defense Supply Center in Columbus (DSCC). The SMD numbers listed here must be used when ordering. Detailed Electrical Specifications for the IS-2100ARH are contained in SMD 5962-99536. A "hotlink" is provided on our website for downloading. www..com Features * Electrically Screened to DSCC SMD # 5962-99536 * QML Qualified per MIL-PRF-38535 Requirements * Radiation Environment - Maximum Total Dose . . . . . . . . . . . . . . . . . 300krad(SI) - DI RSG Process Provides Latch-up Immunity - SEU Rating. . . . . . . . . . . . . . . . . . . . . . 82MeV/mg/cm2 - Vertical Device Architecture Reduces Sensitivity to Low Dose Rates * Bootstrap Supply Max Voltage to 150V * Drives 1000pF Load at 1MHz with Rise and Fall Times of 30ns (Typ) * 1.5A (Typ) Peak Output Current * Independent Inputs for Non-Half Bridge Topologies * Low DC Power Consumption . . . . . . . . . . . . . 60mW (Typ) * Operates with VDD = VCC Over 12V to 20V Range * Low-side Supply Undervoltage Protection Ordering Information ORDERING NUMBER 5962F9953602VXC 5962F9953602QXC IS9-2100ARH/Proto INTERSIL MKT. NUMBER IS9-2100ARH-Q IS9-2100ARH-8 IS9-2100ARH/Proto TEMP. RANGE (oC) -55 to 125 -55 to 125 -55 to 125 Applications * High Frequency Switch-Mode Power Supplies * Drivers for Inductive Loads * DC Motor Drivers Pinout IS-2100ARH FLATPACK (CDFP4-F16) TOP VIEW LO COM VCC NC NC VS VB HO 1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9 NC VSS LIN SD HIN VDD NC NC 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Intersil (and design) is a registered trademark of Intersil Americas Inc. Copyright (c) Intersil Americas Inc. 2002. All Rights Reserved IS-2100ARH Die Characteristics DIE DIMENSIONS: 4820m x 3300m (190 mils x 130 mils) Thickness: 483m 25.4m (19 mils 1 mil) INTERFACE MATERIALS: Glassivation: Type: PSG (Phosphorous Silicon Glass) Thickness: 8.0kA 1.0kA Top Metallization: Type: ALSiCu Thickness: 16.0kA 2kA Substrate: Radiation Hardened Silicon Gate, Dielectric Isolation Backside Finish: Silicon ASSEMBLY RELATED INFORMATION: Substrate Potential: Unbiased (DI) ADDITIONAL INFORMATION: Worst Case Current Density: <2.0 x 105 A/cm2 Transistor Count: 542 Metallization Mask Layout IS-2100ARH SD (13) HIN (12) LIN (14) VSS (15) VDD (11) LO (1) HO (8) COM (2) VB (7) VCC (3) VS (6) All Intersil products are manufactured, assembled and tested utilizing ISO9000 quality systems. Intersil Corporation's quality certifications can be viewed at www.intersil.com/design/quality Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see www.intersil.com 2 |
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